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ISSN No: 2349-2287 (P) | E-ISSN: 2349-2279 (O) | E-mail: editor@ijiiet.com

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International Research Journal of Infinite Innovations in Engineering and Technology (IJIIET)

| ISSN Approved Journal | Impact factor: 7.521 | Follows UGC CARE Journal Norms and Guidelines |

| Monthly, Peer-Reviewed, Refereed, Scholarly, Multidisciplinary and Open Access Journal | Impact factor 7.521 (Calculated by Google Scholar and Semantic Scholar | AI-Powered Research Tool | Indexing) in all Major Database & Metadata, Citation Generator

Title : Design And Validation Of XOR XNOR Hybrid Full Adder Utilizing 32 Nm Technology

Author : Basamalla vivek, DR.V.VIJAYABHASKER

Abstract :

This study use 32nm FinFET technology to develop and analyze a CMOS full adder, aiming to overcome the limitations of traditional bulk CMOS at deep submicron nodes. FinFETs have been the best choice for low-power, high-performance digital circuits because they better regulate short-channel effects and have fewer leakage currents. We use FinFETs in both static and dynamic logic styles to design the entire adder, which is a core part of arithmetic and logic circuits. We then test its performance measures, such as power consumption, latency, and power-delay product (PDP). The proposed architecture leverages the benefits of FinFETs' double-gate topology to achieve an optimal balance between speed and power efficiency. We used industry-standard tools to do comparative simulations to see how well the FinFET-based complete adder worked compared to its bulk CMOS counterpart. The results demonstrate big improvements in energy economy, switching speed, and overall scalability. This means that th

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